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| PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5212 K-Band 2-Stage Power Amplifier DESCRIPTION The MGFC5212 is a GaAs MMIC chip especially designed for 24.5 ~ 26.5 GHz band High Power Amplifier (HPA) . BLOCK DIAGRAM Vg1 Vg2 FEATURES RF frequency : 24.5 to 26.5 GHz Linear gain : 13 dB P1dB : 23 dBm DC power : Vd = 5 V, Id1 + Id2 = 270 mA In Out Vd1 Vd2 ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Symbol Vd1, Vd2 Vg1, Vg2 Id1 Id2 Pin Ta Tstg Tmax Parameter Drain supply voltage Gate supply voltage Drain current 1 Drain current 2 RF input power Backside ambient temp. Storage temp. Maximum assembly temp. Ratings 6 -3 ~ 0.5 120 240 16 -20 ~ +70 -65 ~ +175 +300 Units V V mA mA dBm C C C ELECTRICAL CHARACTERISTICS (Ta = 25 C) Limits Symbol Gain VSWR in VSWR out P1dB IM3 Gain Input VSWR Output VSWR Output power at 1 dB compression point Inter modulation level Parameter Conditions Min. Vd = 5 V Id1 = 90 mA Id2 = 180 mA (RF off) f = 24.5, 26.5 GHz Single tone f = 24.5, 26.5 GHz Tow tone(10MHz off) Pout = 20 dBm 13.0 2.2 2.2 23.0 (22.0) Typ. Max. dB dBm dBc Units MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5212 K-Band 2-Stage Power Amplifier DIE SIZE AND BOND PAD LOCATION(UNIT : M) 1205 460 GND GND 950 RF in GND 550 Vd1 R(Vd1) R(Vd2) GND Vd2 Vg1 Vg2 GND RF out GND 550 350 760 910 1210 1700 X Dimention 1.70 mm Y Dimention 0.95 mm MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5212 K-Band 2-Stage Power Amplifier TYPICAL CHARACTERISTICS Small Signal Performances (Vd = 5 V, Id1 = 90 mA, Id2 = 180 mA, Ta = 25 C) Output Power Performances (Vd = 5 V, Id1 = 90 mA, Id2 = 180 mA, Ta = 25 C) 30 50 f = 26.5GHz 25 40 20 30 15 20 10 10 5 -10 0 -5 0 5 10 15 Pin [dBm] MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5212 K-Band 2-Stage Power Amplifier AN EXAMPLE OF TEST CIRCUIT Vg1 Cb Vg2 Cb Vg1 RFin Vg2 RFout Vd1 R(Vd1) R(Vd2) GND Vd2 Cb Cb Vd1 Vd2 : Chip Condenser ( 39 pF ) Cb > 100 F MITSUBISHI ELECTRIC as of July '98 |
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